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| 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st. Edition February 1999 Features * Low on-resistance N Channel: R DS(on) 0.17 , VGS = 10 V, ID = 4 A P Channel : R DS(on) 0.2 , VGS = -10 V, ID = -4 A * 4 V gate drive devices. * High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S3 S6 S7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source www.DataSheet.in 4AM17 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1% 2. 4 devices operation VDSS VGSS ID I D(pulse) I DR Pch (Tc = 25C) Pch Tch Tstg Note2 Note2 Note1 Unit Pch -60 20 -8 -32 -8 28 4.0 150 V V A A A W W C C 60 20 8 32 8 -55 to +150 2 www.DataSheet.in 4AM17 Electrical Characteristics (Ta = 25C) ( N Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr Min 60 20 -- -- 1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.13 0.19 5.5 33 220 5.2 1.5 0.15 0.5 3.2 1.4 1.5 850 Max -- -- 10 250 2.5 0.17 0.24 -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF k ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0 diF/ dt = 50 A/ s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDS = 10 V, VGS = 0 f = 1 MHz VGS = 10 V, ID = 4 A RL = 7.5 3 www.DataSheet.in 4AM17 ( P Channel ) Item Symbol Min -60 20 -- -- -1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.15 0.2 6.0 17 460 1.2 3.2 0.6 2.1 12 5.8 -1.2 2.5 Max -- -- 10 -250 -2.5 0.2 0.27 -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF k ns ns ns ns V ns I F = -8 A, VGS = 0 I F = -8 A, VGS = 0 diF/ dt = 50 A/ s Test Conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -4 A, VGS = -10 V Note3 I D = -4 A, VGS = -4 V Note3 I D = -4 A, VDS = -10 V Note3 VDS = -10 V VGS = 0 f = 1 MHz VDS = 0, VGS = 0 f = 1 MHz VGS = -10 V, ID = -4 A RL = 7.5 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr 4 www.DataSheet.in 4AM17 Main Characteristics Maximum Channel Dissipation Curve Pc (W) Pc (W) 6 5 4 3 2 1 Condition : Channel dissipation of each die is is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 60 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation Collector Power Dissipation Collector Power Dissipation 20 10 0 25 50 75 100 125 150 Ambient Temperature Tc (C) Maximum Safe Operation Area (N-channel) 0 25 50 75 100 125 Case Temperature Tc (C) Maximum Safe Operation Area (P-channel) 150 50 I D (A) I D (A) 20 10 5 D C -50 10 PW 10 = 0 s -20 -10 -5 D C 10 PW 10 = 1 10 m m s 0 s s 1 s sh 10 Drain Current 2 1 0.5 0.2 0.1 0.05 0.1 s Drain Current m m s s (1 Operation in this area is limited by R DS(on) ot ) -2 -1 -0.5 -0.2 -0.1 (1 O O pe ra tio n (T c = sh Operation in this area is limited by R DS(on) pe ra tio n (T c = 25 ot ) 25 C ) C ) Ta = 25 C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Ta = 25 C -0.05 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) 5 www.DataSheet.in 4AM17 Package Dimensions Unit: mm 31.0 0.3 4.0 0.2 2.7 10.5 0.5 10.0 0.3 1.5 0.2 0.85 0.1 1.4 2.54 0.55 -0.06 +0.1 1 2 3 4 5 6 7 8 9 10 11 12 Hitachi Code JEDEC EIAJ SP-12 -- -- 6 www.DataSheet.in 4AM17 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright (c) Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. 7 www.DataSheet.in |
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